Wet chemical etching survey of III-nitrides

Wet chemical etching of GaN, InN, AlN, InAlN and InGaN was investigated in various acid and base solutions at temperatures up to 75°C. Only KOH-based solutions were found to etch AlN and InAlN. No enchants were found for the other nitrides, emphasizing their extreme lack of chemical reactivity. The...

Full description

Saved in:
Bibliographic Details
Published in:Solid-state electronics 1997-12, Vol.41 (12), p.1947-1951
Main Authors: Vartuli, C.B., Pearton, S.J., Abernathy, C.R., MacKenzie, J.D., Ren, F., Zolper, J.C., Shul, R.J.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Wet chemical etching of GaN, InN, AlN, InAlN and InGaN was investigated in various acid and base solutions at temperatures up to 75°C. Only KOH-based solutions were found to etch AlN and InAlN. No enchants were found for the other nitrides, emphasizing their extreme lack of chemical reactivity. The native oxide on most of the nitrides could be removed in potassium tetraborate at 75°C, or HCl H 2O at 25°C.
ISSN:0038-1101
1879-2405
DOI:10.1016/S0038-1101(97)00173-1