A selforganized double potential barrier in tunneling light emitting silicon MOS structures

A recombination radiation line (S-line) of surface 2D electrons and 2D nonequilibrium holes is observed in electroluminescence spectra of tunneling [100] silicon MOS diodes under tunneling injection of holes into a selforganized hole quantum well. The hole quantum well in presence of an electrical f...

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Bibliographic Details
Published in:Solid-state electronics 1998-09, Vol.42 (9), p.1657-1660
Main Authors: Altukhov, P.D, Ivanov, G.V, Kuzminov, E.G
Format: Article
Language:English
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Summary:A recombination radiation line (S-line) of surface 2D electrons and 2D nonequilibrium holes is observed in electroluminescence spectra of tunneling [100] silicon MOS diodes under tunneling injection of holes into a selforganized hole quantum well. The hole quantum well in presence of an electrical field in the substrate forms an additional potential barrier. The transparency of a double barrier, including the oxide barrier and the additional barrier, can be modulated by the electrical field in the substrate. A possibility of realization of a tunneling ballistic transistor by use of this modulation is discussed. The transistor may serve as a fast and effective light source.
ISSN:0038-1101
1879-2405
DOI:10.1016/S0038-1101(98)00106-3