Growth of the Ge overlayer on Si(100)-(2×1)

The initial stages of the development of a Ge adatom layer on a clean Si(001)-(2×1) surface are consistent with random deposition and limited surface mobility. A critical comparison of the rate of attenuation of the Si buckled dimer up-atom signal by Ge deposition with the growth of the two well-res...

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Bibliographic Details
Published in:Surface science 2000-08, Vol.461 (1), p.L565-L569
Main Authors: Pi, T.-W., Wu, R.-T., Ouyang, C.-P., Wen, J.-F., Wertheim, G.K.
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Germanium
Growth
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Photoelectron spectroscopy
Physics
Silicon
Single crystal epitaxy
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Summary:The initial stages of the development of a Ge adatom layer on a clean Si(001)-(2×1) surface are consistent with random deposition and limited surface mobility. A critical comparison of the rate of attenuation of the Si buckled dimer up-atom signal by Ge deposition with the growth of the two well-resolved features of the Ge adatom spectrum rules out the substitution of Ge into the Si dimers. Instead, Ge is captured by the dangling bonds of the Si dimers and remains on the surface, initially dominantly as isolated Ge atoms, then as dimers, and finally in islands or clusters.
ISSN:0039-6028
1879-2758
DOI:10.1016/S0039-6028(00)00618-X