PEEM imaging of dopant contrast in Si(001)

• Published in: Surface science 2000-08, Vol.461 (1), p.L570-L574
• Main Authors: Ballarotto, V.W., Siegrist, K., Phaneuf, R.J., Williams, E.D., Mogren, S.
• Format: Article
• Language: English
• Subjects: Applied sciences; Condensed matter: structure, mechanical and thermal properties; Defects and impurities in crystals; microstructure; Doping and impurity implantation in germanium and silicon; Electron microscopy; Electronics; Exact sciences and technology; Impurity doping, diffusion and ion implantation technology; Microelectronic fabrication (materials and surfaces technology); Photoelectron emission; Photoemission (total yield); Physics; Semi-empirical models and model calculations; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon; Structure of solids and liquids; crystallography; Surface electronic phenomena (work function, surface potential, surface states, etc.)
• ISSN: 0039-6028; 1879-2758
• DOI: 10.1016/S0039-6028(00)00619-1

We report on a quantitative investigation of doping-induced contrast in photoelectron emission microscopy images of Si devices. The calibration samples were fabricated using standard photolithography and focused ion beam writing, and consisted of p-type (B) stripes of different nominal dopant concentrations (10 18–10 20 cm −3) and line separations, written on n-type ( N d=10 14 cm −3) Si(001) substrates. Using a near-threshold light source, we find that the signal intensity increases monotonically with B concentration over the measured range of doping. The measured intensity ratios are in good agreement with a calculation based on photoemission from the valence band.