Indentification of the 6H-SiC(0001) 3×3 surface reconstruction core-level shifted components

We investigate the 6H-SiC(0001) 3×3 surface reconstruction by Si 2p and C 1s core-level photoemission spectroscopy using synchrotron radiation providing the first identification of surface core-level shifted components. Specific spectral features at the Si 2p core level, including bulk (B) and two s...

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Bibliographic Details
Published in:Surface science 2000-09, Vol.464 (1), p.L691-L696
Main Authors: Amy, F., Soukiassian, P., Hwu, Y.K., Brylinski, C.
Format: Article
Language:English
Subjects:
Semiconducting surfaces
Silicon carbide
Single crystal surfaces
Surface relaxation and reconstruction
Synchrotron radiation photoelectron spectroscopy
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Summary:We investigate the 6H-SiC(0001) 3×3 surface reconstruction by Si 2p and C 1s core-level photoemission spectroscopy using synchrotron radiation providing the first identification of surface core-level shifted components. Specific spectral features at the Si 2p core level, including bulk (B) and two surface shifted (SS1 and SS2) components, show a surface reconstruction structure involving several silicon atomic planes. In comparison, the C 1s core level shows no involvement of carbon atoms in the 6H-SiC(0001) 3×3 surface reconstruction structure. These results, obtained by an attenuation layer model, indicate that SS1 is related to the Si adatom and that SS2 is related to the Si adlayer+trimer of the 6H-SiC(0001) 3×3 surface reconstruction.
ISSN:0039-6028
1879-2758
DOI:10.1016/S0039-6028(00)00637-3