IR line width broadening at nearly ideal H-termination region on Si [formula omitted] surfaces

The dependence of the line width of the coupled monohydride symmetric stretching vibration of the H-terminated Si(1 0 0)-(2×1) surface on the exposure temperature and the hydrogen exposure has been investigated with infrared reflection absorption spectroscopy (IRRAS) using CoSi 2 buried metal layer...

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Bibliographic Details
Published in:Surface science 2002-04, Vol.502, p.86-90
Main Authors: Wang, Zhi-Hong, Noda, Hideyuki, Nonogaki, Youichi, Yabumoto, Norikuni, Urisu, Tsuneo
Format: Article
Language:English
Subjects:
Deuterium
Diffusion and migration
Hydrogen atom
Infrared absorption spectroscopy
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Summary:The dependence of the line width of the coupled monohydride symmetric stretching vibration of the H-terminated Si(1 0 0)-(2×1) surface on the exposure temperature and the hydrogen exposure has been investigated with infrared reflection absorption spectroscopy (IRRAS) using CoSi 2 buried metal layer substrate. Even for nearly ideally H-terminated Si(1 0 0) surface, the line width significantly changes depending on the exposure temperature and the hydrogen exposure. The reason of the line width broadening is discussed, and it is strongly suggested that hydrogen diffusion into the subsurface of Si has a significant influence on the line width broadening. Evidence of hydrogen (deuterium) diffusion into the subsurface is investigated for the first time using an IRRAS measurement.
ISSN:0039-6028
1879-2758
DOI:10.1016/S0039-6028(01)01903-3