Reconstruction determined submonolayer growth of Ag on Si( [formula omitted])-(7×7) surface

The submonolayer growth of Ag on Si(1 1 1)-(7×7) surface at temperatures from 420 to 540 K was studied. Island densities, size distributions and average number of Ag atoms per occupied half-unit cell (HUC) of 7×7 reconstruction were investigated. At higher coverage large 2D islands with jagged shape...

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Bibliographic Details
Published in:Surface science 2002-06, Vol.507, p.389-393
Main Authors: Sobotı́k, Pavel, Ošt'ádal, Ivan, Kocán, Pavel
Format: Article
Language:English
Subjects:
Epitaxy
Growth
Metal–semiconductor interfaces
Silicon
Silver
Surface structure, morphology, roughness, and topography
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Summary:The submonolayer growth of Ag on Si(1 1 1)-(7×7) surface at temperatures from 420 to 540 K was studied. Island densities, size distributions and average number of Ag atoms per occupied half-unit cell (HUC) of 7×7 reconstruction were investigated. At higher coverage large 2D islands with jagged shapes were observed. A scenario of the growth was outlined, based on the assumptions of existence of saturated Ag islands on the surface which cannot overgrow HUC boundaries by adatom capture. Such a model explains morphology of the large islands as well as the presence of the large amount of small islands formed inside HUCs. The capacity of a single HUC was found to be ≈18 Ag atoms and the capacity of HUCs covered by the large islands was found to be ≈31 Ag atoms on average.
ISSN:0039-6028
1879-2758
DOI:10.1016/S0039-6028(02)01275-X