Stabilization of the Pb/Si(1 1 1)-(7×7) uniform height islands to higher temperatures with oxygen adsorption

We have studied how oxygen adsorbed on top of the uniform height Pb islands, (grown on Si(1 1 1)-(7×7) at low temperatures T l

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Bibliographic Details
Published in:Surface science 2002, Vol.515 (1), p.187-198
Main Authors: Stepanovskyy, S., Yeh, V., Hupalo, M., Tringides, M.C.
Format: Article
Language:English
Subjects:
Adsorption and desorption kinetics
evaporation and condensation
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Growth
Lead
Physics
Quantum effects
Silicon
Solid-fluid interfaces
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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Description
Summary:We have studied how oxygen adsorbed on top of the uniform height Pb islands, (grown on Si(1 1 1)-(7×7) at low temperatures T l
ISSN:0039-6028
1879-2758
DOI:10.1016/S0039-6028(02)01881-2