Stochastic approach to the smart quantum confinement model in porous silicon

A model that encompasses two approaches to explain the photoluminescence in p-type porous silicon is proposed. The model considers a stochastic distribution of nanocrystallite sizes within the porous matrix and explain the luminescence emission of air-exposed specimens in terms of the presence of Si...

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Bibliographic Details
Published in:Surface science 2002-09, Vol.515 (2), p.L509-L513
Main Authors: Ramı́rez-Porras, A, Weisz, S.Z
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electrochemical methods
Elemental semiconductors and insulators
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Photoluminescence
Physics
Quantum wells
Semi-empirical models and model calculations
Semiconducting films
Silicon
Silicon oxides
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Summary:A model that encompasses two approaches to explain the photoluminescence in p-type porous silicon is proposed. The model considers a stochastic distribution of nanocrystallite sizes within the porous matrix and explain the luminescence emission of air-exposed specimens in terms of the presence of SiO and SiH bonds. Fitting of experimental data is performed to extract size-related statistical parameters. The results are in good agreement with the band-to-band and localized state-to-band transition theoretical framework.
ISSN:0039-6028
1879-2758
DOI:10.1016/S0039-6028(02)01963-5