Resonant photoemission from Si(0 0 1)

The evolution of the silicon valence-band photoemission spectra is observed in the photon energy range from the threshold of Si 2p core-level excitation to about 50 eV above this threshold. Besides the Si 3s3p- and 3p-like features in the spectra, there exhibits a new peak which is significantly enh...

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Bibliographic Details
Published in:Surface science 2003-02, Vol.524 (1), p.137-140
Main Authors: Chen, Gang, Ding, Xunmin, Wang, Xun, Li, Zheshen
Format: Article
Language:English
Subjects:
Clean metal, semiconductor, and insulator surfaces
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron and ion emission by liquids and solids
impact phenomena
Exact sciences and technology
Photoemission (total yield)
Photoemission and photoelectron spectra
Physics
Silicon
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Summary:The evolution of the silicon valence-band photoemission spectra is observed in the photon energy range from the threshold of Si 2p core-level excitation to about 50 eV above this threshold. Besides the Si 3s3p- and 3p-like features in the spectra, there exhibits a new peak which is significantly enhanced while the photon energy is in the neighborhood of 20 eV above the Si 2p core-level excitation threshold. This phenomenon is suggested to be a resonant photoemission caused by the interference between the primary photoexcitation of 3s3p and its autoionization due to direct recombination of the 2p3d excitation.
ISSN:0039-6028
1879-2758
DOI:10.1016/S0039-6028(02)02505-0