AFM and SNOM characterization of carboxylic acid terminated silicon and silicon nitride surfaces

• Published in: Surface science 2003-10, Vol.544 (1), p.51-57
• Main Authors: Cricenti, A., Longo, G., Luce, M., Generosi, R., Perfetti, P., Vobornik, D., Margaritondo, G., Thielen, P., Sanghera, J.S., Aggarwal, I.D., Miller, J.K., Tolk, N.H., Piston, D.W., Cattaruzza, F., Flamini, A., Prosperi, T., Mezzi, A.
• Format: Article
• Language: English
• Subjects: Atomic force microscopy; Carboxylic acid; Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Physics; Silicon; Silicon nitride; Solid surfaces and solid-solid interfaces; Surface structure and topography; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
• ISSN: 0039-6028; 1879-2758
• DOI: 10.1016/S0039-6028(03)00999-3

Silicon and silicon nitride surfaces have been successfully terminated with carboxylic acid monolayers and investigated by atomic force microscopy (AFM) and scanning near-field optical microscopy (SNOM). On clean Si surface, AFM showed topographical variations of 0.3–0.4 nm while for the clean Si 3N 4 surface the corrugation was around 3–4 nm. After material deposition, the corrugation increased in both samples with a value in topography of 1–2 nm for Si and 5–6 nm for Si 3N 4. The space distribution of specific chemical species was obtained by taking SNOM reflectivity at several infrared wavelengths corresponding to stretch absorption bands of the material. The SNOM images showed a constant contribution in the local reflectance, suggesting that the two surfaces were uniformly covered.