The enhancement factor of hyper-Raman scattering from an inhomogeneous semiconductor surface

Hyper-Raman scattering (HRS) of light from the inhomogeneous surface region of a semiconductor is considered theoretically. The HRS enhancement factor induced by band-bending inhomogeneities in a heavily doped, degenerate semiconductor is evaluated. It is argued that such enhancement effects can be...

Full description

Saved in:
Bibliographic Details
Published in:Surface science 1997-04, Vol.377, p.436-439
Main Authors: Ipatova, I.P., Maslov, A.Yu, Udod, L.V., Benedek, G., Panzarini, G.
Format: Article
Language:English
Subjects:
Metal-semiconductor interfaces
Models of non-linear phenomena
Semiconducting surfaces
Semiconductor-semiconductor interfaces
Citations: Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Hyper-Raman scattering (HRS) of light from the inhomogeneous surface region of a semiconductor is considered theoretically. The HRS enhancement factor induced by band-bending inhomogeneities in a heavily doped, degenerate semiconductor is evaluated. It is argued that such enhancement effects can be exploited for special applications, e.g., for a micro-HRS induced by a metal tip on a semiconductor surface.
ISSN:0039-6028
1879-2758
DOI:10.1016/S0039-6028(96)01427-6