Photoemission of Ge(110) at room and high temperature

Valence band and Ge 3d core level photoemissions have been carried out on Gd(110) at room and high temeprature. Structures in the room-temperature valence band spectrum are interpreted in terms of bulk interband transitions and a surface state. Major changes in the valence band take place at ∼800 K,...

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Bibliographic Details
Published in:Surface science 1998-05, Vol.402, p.875-879
Main Authors: Laine, A.D, Cepek, C, Goldoni, A, Vandré, S, DeSeta, M, Franco, N, Avila, J, Asensio, M.C, Sancrotti, M
Format: Article
Language:English
Subjects:
Germanium
Low index single crystal surfaces
Phase transitions
Photoelectron spectroscopy
Semiconducting surfaces
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Summary:Valence band and Ge 3d core level photoemissions have been carried out on Gd(110) at room and high temeprature. Structures in the room-temperature valence band spectrum are interpreted in terms of bulk interband transitions and a surface state. Major changes in the valence band take place at ∼800 K, at which temperature, the centroids of the core level spectra start to move to a lower binding energy, and their widths start to increase more quickly.
ISSN:0039-6028
1879-2758
DOI:10.1016/S0039-6028(97)01075-3