The effect of hydrogen termination on In growth on Si(100) surface

• Published in: Surface science 1998-04, Vol.401 (3), p.L425-L431
• Main Authors: Ryu, J.-T, Kui, K, Noda, K, Katayama, M, Oura, K
• Format: Article
• Language: English
• Subjects: Cross-disciplinary physics: materials science; rheology; Epitaxial growth; Exact sciences and technology; Hydrogen termination; Ion scattering spectroscopy; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; SK growth mode; TOF-ICISS
• ISSN: 0039-6028; 1879-2758
• DOI: 10.1016/S0039-6028(98)00037-5

We have investigated the effect of hydrogen termination on the initial stage of In growth on Si(100) surface at room temperature using time-of-flight impact collision ion scattering spectroscopy (TOF-ICISS) and low-energy electron diffraction (LEED). In this study, we found that In thin films grown on both clean and hydrogen-terminated Si(100)1×1 surfaces showed quite different results. The In thin film on the clean Si(100)2×1 surface epitaxially grows with the orientation of In(100)[011]//Si(100)[011]. On the contrary, the In thin film on the hydrogen-terminated Si(100)1×1 surface grows as a polycrystalline film. In other words, epitaxial growth of In thin films is disrupted by the presence of hydrogen atoms residing at the interface between the films and Si substrate. The growth mode of In thin films grown on both surfaces is SK growth mode, which indicates that the growth mode is not changed by hydrogen termination.