Quantitative analysis of titanium nitride by auger electron spectroscopy

Titanium nitride may be used as a hard coating material or as a dielectric in semiconductor devices whose properties for an application depend on the composition of the film. Auger electron spectroscopy is often used as a method for elemental quantification of thin film materials; however, the Auger...

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Bibliographic Details
Published in:Thin solid films 1990, Vol.193 (1-2), p.305-311
Main Authors: Watson, D.G., Stickle, W.F., Diebold, A.C.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron and ion emission by liquids and solids
impact phenomena
Exact sciences and technology
Physics
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Summary:Titanium nitride may be used as a hard coating material or as a dielectric in semiconductor devices whose properties for an application depend on the composition of the film. Auger electron spectroscopy is often used as a method for elemental quantification of thin film materials; however, the Auger electron spectrum of TiN x is complicated by the direct overlap of the N KL 2,3L 2,3 and Ti L 3M 2,3M 2,3 at 387 eV kinetic energy. Using target factor analysis, we have isolated the Auger spectra of nitrogen and titanium from TiN x samples of different stoichiometry. The isolated spectra are then used to fit Auger spectra of titanium nitride samples by linear least squares. The combination of target factor analysis and linear least-squares fitting is demonstrated to be an accurate method for quantification of titanium and nitrogen in TiN x films.
ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(05)80039-2