A comparative study on the properties of TiN films prepared by chemical vapor deposition enhanced by r.f. plasma and by electron cyclotron resonance plasma

TiN thin films were prepared by both r.f. plasma enhanced chemical vapor deposition (r.f.-PECVD) and electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD) using TiCl 4, N 2 and H 2 as the reactants at various deposition temperatures. The effects of deposition temperature...

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Bibliographic Details
Published in:Thin solid films 1997-01, Vol.292 (1), p.124-129
Main Authors: Kim, Jong-Seok, Jun, Byung-Hyuk, Lee, Eung-Jik, Hwang, Chan-Yong, Lee, Won-Jong
Format: Article
Language:English
Subjects:
Chemical vapour deposition (CVD)
Metallization
Plasma processing and deposition
Titanium nitride
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Summary:TiN thin films were prepared by both r.f. plasma enhanced chemical vapor deposition (r.f.-PECVD) and electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD) using TiCl 4, N 2 and H 2 as the reactants at various deposition temperatures. The effects of deposition temperature on the compositional ratio [N]/[Ti], impurity content, crystallinity, lattice parameter, grain size, deposition rate, resistivity and step coverage were studied. TiN films prepared by ECR-PECVD were highly crystallized at a low temperature of 350 °C, while TiN films prepared by r.f.-PECVD began to show obvious crystallinity above500 °C. TiN films deposited by ECR-PECVD at lowertemperatures had lower impurity contents and lowerresistivity than those deposited by r.f.-PECVD.
ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(96)09098-0