Effect of the cyclic growth/etching time ratio on the [lcub]100[rcub]-oriented texture growth of a diamond film

The growth of a diamond film with [lcub]100[rcub]-oriented texture on Si substrates (1×1 cm 2) has been achived by a three-step process (carburization → nucleation → growth) in a microwave-plasma-enhanced chemical vapor deposition (MPECVD) system. We employed a cyclic technique in the nucleation ste...

Full description

Saved in:
Bibliographic Details
Published in:Thin solid films 1996-12, Vol.290, p.161-164
Main Authors: Kim, S.H., Park, Y.S., Han, I.T., Yun, W.S., Lee, J-W.
Format: Article
Language:English
Subjects:
Chemical vapour deposition (CVD)
Diamond
Epitaxy
Nucleation
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The growth of a diamond film with [lcub]100[rcub]-oriented texture on Si substrates (1×1 cm 2) has been achived by a three-step process (carburization → nucleation → growth) in a microwave-plasma-enhanced chemical vapor deposition (MPECVD) system. We employed a cyclic technique in the nucleation step together with the various etching time intervals in the cyclic process. The properties of the diamond film were found to be strongly dependent on the etching time interval in the cyclic process. After the nucleation step. we investigated in the detail the state of the sample surface. Based upon these results, we discuss the effect of etching time interval on the properties of diamond films, particularly on the [lcub]100[rcub]-oriented texture growth.
ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(96)09191-2