Porous structure of silica films obtained by monosilane oxidation

The porous structure of silica films obtained by monosilane oxidation by oxygen in an isothermal reactor in the temperature range 150–250°C and pressure 0.5–1.2 Torr has been investigated by means of adsorption porometry. It has been found that at T200°C, the minimum pore radius in the films is weak...

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Bibliographic Details
Published in:Thin solid films 1998-03, Vol.315 (1), p.72-76
Main Authors: Dultsev, F.N, Nenasheva, L.A, Vasilyeva, L.L
Format: Article
Language:English
Subjects:
Adsorption porometry
Monosilane oxidation
Silica films
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Summary:The porous structure of silica films obtained by monosilane oxidation by oxygen in an isothermal reactor in the temperature range 150–250°C and pressure 0.5–1.2 Torr has been investigated by means of adsorption porometry. It has been found that at T200°C, the minimum pore radius in the films is weakly dependent on pressure; besides, the film density increases during its growth due to solid-phase reactions within the bulk of the film. The mechanisms of the influence of gas-phase stages of monosilane oxidation on the regularities of mesopore formation at deposition temperature within 150–200°C is discussed, as well as the possibility of obtaining layers with a required porosity.
ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(97)00748-7