Simulation of atomic-scale surface migration in homoepitaxial growth using embedded-atom method potentials for gold

Surface adsorption and surface diffusion are simulated by use of molecular dynamics method and N-body embedded-atom method (EAM) potential for gold. The relation between the growth rate of thin films and the packing density of atoms using Monte Carlo simulation is obtained. The results of the molecu...

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Bibliographic Details
Published in:Thin solid films 1998-04, Vol.318 (1), p.52-56
Main Authors: Takano, Jun-ichiro, Takai, Osamu, Kogure, Yoshiaki, Doyama, Masao
Format: Article
Language:English
Subjects:
Applied sciences
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Diffusion
interface formation
Embedded-atom method
Exact sciences and technology
Homoepitaxial growth
Materials science
Metals. Metallurgy
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Solid surfaces and solid-solid interfaces
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin films
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Summary:Surface adsorption and surface diffusion are simulated by use of molecular dynamics method and N-body embedded-atom method (EAM) potential for gold. The relation between the growth rate of thin films and the packing density of atoms using Monte Carlo simulation is obtained. The results of the molecular dynamics method and the Monte Carlo method were combined, so that the growth process of thin films at elevated temperatures, which is too long to calculate, can be studied.
ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(97)01137-1