Electrical and optical properties of InP grown by molecular beam epitaxy using a valved phosphorus cracker cell

• Published in: Thin solid films 1998-08, Vol.326 (1), p.233-237
• Main Authors: Yoon, S.F., Zheng, H.Q., Zhang, P.H., Mah, K.W., Ng, G.I.
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Conductivity of specific materials; Cross-disciplinary physics: materials science; rheology; Electronic transport in condensed matter; Exact sciences and technology; Iii-v and ii-vi semiconductors; Iii-v semiconductors; Indium phosphide; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Molecular beam epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Phosphorus; Photoluminescence; Physics; Semiconductors
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/S0040-6090(98)00563-X

We report the molecular beam epitaxial (MBE) growth of high quality epitaxial indium phosphide (InP) using a valved phosphorus cracker cell over a wide range of V/III flux ratio (1.2–9.3) and substrate temperature (360°C to 500°C). The as-grown epitaxial InP on InP (100) substrate was n-type, with a background electron concentration and mobility which varied according to the V/III flux ratio and substrate temperature ( T s). Using a cracking zone temperature ( T cr) of 850°C, the highest electron mobility at 77 K of 40 900 cm 2/Vs was achieved at a V/III flux ratio of 2.3 at a substrate temperature of 440°C. The corresponding background electron concentration at 77 K was the lowest at 1.74×10 15 cm −3. The photoluminescence (PL) full-width at half maximum (FWHM) decreased significantly in samples grown at lower flux ratios indicating an improvement in the optical quality.