Polycrystalline silicon film growth in a SiF4/SiH4/H2 plasma

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Bibliographic Details
Published in:Thin solid films 1999-01, Vol.337 (1-2), p.55-58
Main Authors: LEE, B, QUINN, L. J, BAINE, P. T, MITCHELL, S. J. N, ARMSTRONG, B. M, GAMBLE, H. S
Format: Article
Language:English
Subjects:
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
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ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(98)01183-3