Misfit dislocations of epitaxial (110) niobium‖ (112̄0) sapphire interfaces grown by molecular beam epitaxy

High resolution electron microscopy, HREM, of (110) Nb‖(112̄0) Al 2 O 3 interfaces grown by molecular beam epitaxy, MBE, has confirmed that the interface is semicoherent for the films investigated, and that for this orientation misfit dislocations occur at the interface both with and without stand-o...

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Bibliographic Details
Published in:Thin solid films 2000, Vol.358 (1), p.94-98
Main Authors: Grier, E.J., Jenkins, M.L., Petford-Long, A.K., Ward, R.C.C., Wells, M.R.
Format: Article
Language:English
Subjects:
Applied sciences
Composition
defects and impurities
Condensed matter: structure, mechanical and thermal properties
Electron microscopy
Exact sciences and technology
Interfaces
Metals. Metallurgy
Molecular beam epitaxy
Niobium
Physics
Solid surfaces and solid-solid interfaces
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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Summary:High resolution electron microscopy, HREM, of (110) Nb‖(112̄0) Al 2 O 3 interfaces grown by molecular beam epitaxy, MBE, has confirmed that the interface is semicoherent for the films investigated, and that for this orientation misfit dislocations occur at the interface both with and without stand-off from the interface. The dislocation networks have been identified by conventional transmission electron microscopy, CTEM, to be composed of misfit dislocations with a Burgers vector of 1/2〈111〉, which corresponds to the Burgers vector of bulk dislocations in Nb.
ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(99)00675-6