Features of sputtering of nitrides with various component mass ratios

Sputtering of single and polycrystals of three nitrides BN, AlN and GaN of wurzite structure by Ar ions with energy E 0=0.3–10 keV was computer simulated by the molecular dynamics method. The total yields are inversely proportional to the binding energies for polycrystals for E 0>2 keV. Under nor...

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Bibliographic Details
Published in:Vacuum 2000-03, Vol.56 (4), p.247-252
Main Authors: Promokhov, A.A, Mosunov, A.S, Elovikov, S.S, Yurasova, V.E
Format: Article
Language:English
Subjects:
AlN
Computer simulation
GaN
Nitride
Sputtering
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Summary:Sputtering of single and polycrystals of three nitrides BN, AlN and GaN of wurzite structure by Ar ions with energy E 0=0.3–10 keV was computer simulated by the molecular dynamics method. The total yields are inversely proportional to the binding energies for polycrystals for E 0>2 keV. Under normal ion incidence ( α=0°), preferential sputtering of the light component of nitrides increases with component mass difference, especially for low E 0. The fraction of the light component is lower for α=45° than for α=0°, particularly for small E 0. Spatial distribution anisotropy from single crystals is most pronounced for the sputtering of second-layer atoms when the first layer consists of the lighter atoms, and is low for both components when the first layer consists of the heavier atoms. The number of atoms in collision sequences leading to ejection was found.
ISSN:0042-207X
1879-2715
DOI:10.1016/S0042-207X(00)00123-8