Characterization of interface states at Au/InSb/InP(100) Schottky barrier diodes as a function of frequency

• Published in: Vacuum 2000-05, Vol.57 (2), p.219-228
• Main Authors: Akkal, B., Benamara, Z., Gruzza, B., Bideux, L.
• Format: Article
• Language: English
• ISSN: 0042-207X; 1879-2715
• DOI: 10.1016/S0042-207X(00)00131-7

The purpose of this paper is to characterize interface states in Au/InSb/InP(1 0 0) Schottky-type diodes and determine the effect of InSb surface preparation on the energy density distribution and relaxation time of the interface state. In the latter diode, InSb forms a fine restructuration layer allowing to block In atoms migration to surface. We have proceeded as follows: first, a great amount of antimony has been evaporated and, as a second step, the excess antimony is removed by heating the substrate at 300°C. The characteristic parameters of the interface states are derived from the capacitance-voltage C( V G), conductance–voltage G( V G) measured as a function of frequency and current–voltage I( V G) under forward biases. The mean density of interface states N ss estimated was 3.05×10 12 eV −1 cm −2, the interface states were responsible for the non-ideal behavior of the I( V G) characteristics of the diodes. The relaxation times are independent of the bias and varies with N ss in the range 7.1×10 −4 s and 3.7×10 −3 s.