Deposition of thin films of different oxides of copper by RF reactive sputtering and their characterization

• Published in: Vacuum 2000-06, Vol.57 (4), p.377-385
• Main Authors: Ghosh, S, Avasthi, D.K, Shah, P, Ganesan, V, Gupta, A, Sarangi, D, Bhattacharya, R, Assmann, W
• Format: Article
• Language: English
• Subjects: Atomic force microscopy; Condensed matter: structure, mechanical and thermal properties; Copper oxide; Cross-disciplinary physics: materials science; rheology; Deposition by sputtering; Elastic recoil detection analysis; Exact sciences and technology; Grazing angle X-ray diffraction; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Reactive sputtering; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Thornton zone model
• ISSN: 0042-207X; 1879-2715
• DOI: 10.1016/S0042-207X(00)00151-2

Thin films of Cu 2O and CuO are deposited by RF reactive sputtering at different substrate temperatures. Crystalline phases are identified by grazing angle X-ray diffraction (GAXRD). It shows that Cu 2O phase is prominent at the substrate temperature corresponding to 30°C (no deliberate heating of the substrate) and 150°C. CuO phase is obtained at a substrate temperature of 300°C. The band gap of the films are found by optical absorption method. Surface morphology of the films are characterized by atomic force microscopy (AFM). Stoichiometric analysis is done by elastic recoil detection analysis (ERDA) technique with high-energy heavy ion beam.