Preparation and characterization of NiO thin films for gas sensor applications

Nickel oxide (NiO) thin films were prepared by DC reactive magnetron sputtering from a nickel metal target in an Ar+O 2 mixed atmosphere in two sputtering modes. The oxygen content in the gas mixture varied from 15 to 45%. The films deposited in the metal-sputtering mode at a high target voltage (32...

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Bibliographic Details
Published in:Vacuum 2000-08, Vol.58 (2), p.300-307
Main Authors: Hotový, I, Huran, J, Spiess, L, Čapkovic, R, Haščı́k, Š
Format: Article
Language:English
Subjects:
Gas sensors
Nickel oxide
Reactive magnetron sputtering
Thin films
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Summary:Nickel oxide (NiO) thin films were prepared by DC reactive magnetron sputtering from a nickel metal target in an Ar+O 2 mixed atmosphere in two sputtering modes. The oxygen content in the gas mixture varied from 15 to 45%. The films deposited in the metal-sputtering mode at a high target voltage (320–326 V) resulted in a polycrystalline (fcc) NiO phase with nearly stoichiometric composition. On the contrary, the films prepared in the oxide-sputtering mode at a low target voltage (293–298 V) were amorphous and oxygen rich. All examined NiO films were semiconductors and their conductance increased by four orders of magnitude between 25 and 350°C. Finally, NiO films were tested in order to investigate their response to NH 3 at various operating temperatures.
ISSN:0042-207X
1879-2715
DOI:10.1016/S0042-207X(00)00182-2