Study of the discharge gas trapping during thin-film growth

Discharge gas trapping in thin films produced by sputtering is known to be due to high-energy neutrals bouncing back from the cathode. Qualitatively, the phenomenon is enhanced by raising the discharge voltage and is strongly dependent on the atomic masses of the discharge gas and of the cathode mat...

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Bibliographic Details
Published in:Vacuum 2001, Vol.60 (1), p.89-94
Main Authors: Amorosi, S, Anderle, M, Benvenuti, C, Calatroni, S, Carver, J, Chiggiato, P, Neupert, H, Vollenberg, W
Format: Article
Language:English
Subjects:
Applied sciences
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Defects and impurities: doping, implantation, distribution, concentration, etc
Deposition by sputtering
Exact sciences and technology
Materials science
Metals. Metallurgy
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:Discharge gas trapping in thin films produced by sputtering is known to be due to high-energy neutrals bouncing back from the cathode. Qualitatively, the phenomenon is enhanced by raising the discharge voltage and is strongly dependent on the atomic masses of the discharge gas and of the cathode material. In addition to these known effects it is shown that, for a given gas, the trapped amount decreases with increasing melting temperature of the deposited material. The results obtained both by sample melting and laser ablation are presented and discussed.
ISSN:0042-207X
1879-2715
DOI:10.1016/S0042-207X(00)00359-6