Hundred MeV heavy ion irradiation effect on boron diffusion in Si

The results of experimental study of boron (140keV, 2×1015cm−2) depth profiles and electrical activation processes in silicon after irradiation with 305MeV Kr (1012cm−2) and 710MeV Bi (1011 and 1012cm−2) ions during post-radiation furnace annealing have been presented. It was found that there is no...

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Bibliographic Details
Published in:Vacuum 2001-08, Vol.63 (4), p.571-575
Main Authors: Skuratov, V.A., Dinu, N., Antonova, I.V., Obodnikov, V.I.
Format: Article
Language:English
Subjects:
Boron diffusion
High-energy heavy ions
Ion implantation
Silicon
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Summary:The results of experimental study of boron (140keV, 2×1015cm−2) depth profiles and electrical activation processes in silicon after irradiation with 305MeV Kr (1012cm−2) and 710MeV Bi (1011 and 1012cm−2) ions during post-radiation furnace annealing have been presented. It was found that there is no difference in boron depth distribution in reference and high-energy ion irradiated samples before the heat treatment. The effect of 100MeV ion irradiation reveals in the shift of boron depth distribution towards the depth of the material and significant decrease in electrical activation of dopants. The difference in dynamics of boron activation in reference and high-energy heavy ion irradiated silicon samples is attributed to the formation of stable defect clusters in ion track range.
ISSN:0042-207X
1879-2715
DOI:10.1016/S0042-207X(01)00241-X