ECR-plasma parameters and properties of thin DLC films

We studied the correlation between CH 4-plasma parameters and the properties of thin diamond-like carbon films deposited using electron–cyclotron–resonance chemical vapor deposition. The deposition was done with the contribution of the ions incident to the sample. We attribute the high quality of th...

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Bibliographic Details
Published in:Vacuum 2002-08, Vol.66 (3), p.487-493
Main Authors: Inaba, H., Fujimaki, S., Furusawa, K., Todoroki, S.
Format: Article
Language:English
Subjects:
Carbon
CH 4
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
CVD
DLC
ECR
Exact sciences and technology
Ion
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Physics of gases, plasmas and electric discharges
Physics of plasmas and electric discharges
Plasma
Plasma applications
Radical
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Summary:We studied the correlation between CH 4-plasma parameters and the properties of thin diamond-like carbon films deposited using electron–cyclotron–resonance chemical vapor deposition. The deposition was done with the contribution of the ions incident to the sample. We attribute the high quality of the films to the ions penetrating the sample and transferring their energy at 16 eV/Å with a flux density same as that of radicals.
ISSN:0042-207X
1879-2715
DOI:10.1016/S0042-207X(02)00120-3