Patterning of a micromechanical coplanar waveguide using a dry etching technique

GaAs micromachining technology was used for fabricating coplanar transmission lines on membrane-like AlGaAs/GaAs and InGaP/GaAs bridges. A front-side surface micromachining is combined with a back-side bulk GaAs micromachining. A double-side aligned selective reactive ion etching of GaAs and GaAs he...

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Bibliographic Details
Published in:Vacuum 2002-12, Vol.69 (1), p.283-287
Main Authors: HASCIK, S, MOZOLOVA, Z, LALINSKY, T, TOMASKA, M, KOSTIC, I
Format: Article
Language:English
Subjects:
Applied sciences
Circuit properties
Coplanar waveguide
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
GaAs
InGaP
Integrated optics. Optical fibers and wave guides
Microelectronic fabrication (materials and surfaces technology)
Optical and optoelectronic circuits
RIE
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:GaAs micromachining technology was used for fabricating coplanar transmission lines on membrane-like AlGaAs/GaAs and InGaP/GaAs bridges. A front-side surface micromachining is combined with a back-side bulk GaAs micromachining. A double-side aligned selective reactive ion etching of GaAs and GaAs heterostructures through the openings in masks, using AlGaAs or InGaP as an etch-stop layers is then used for three-dimensional patterning of the bridge based micromechanical coplanar wavequide (MCPW). MCPW test structures of various lengths (150–900 μm) were defined by Ti/Au metallization. A lift-off technique was used to pattern the transmission lines in accordance with the MCPW simulation.
ISSN:0042-207X
1879-2715
DOI:10.1016/S0042-207X(02)00346-9