Anomalous temperature dependence of series resistance in Ag\Si and Al\Si Schottky junctions

Recently high temperature dependence of series resistance was obtained in Ag\n-Si and Al\n-Si\p-Si Schottky junctions prepared by ionised cluster beam deposition and by plasma immersion implantation, respectively. In this work it is shown by experiments that this feature was due to the poor quality...

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Bibliographic Details
Published in:Vacuum 1998-07, Vol.50 (3-4), p.417-419
Main Authors: Horváth, Zs J, Ádám, M, Pintér, I, Cvikl, B, Korošak, D, Mrdjen, T, Tuyen, Vo Van, Makaró, Zs, Dücsö, Cs, Bársony, I
Format: Article
Language:English
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Summary:Recently high temperature dependence of series resistance was obtained in Ag\n-Si and Al\n-Si\p-Si Schottky junctions prepared by ionised cluster beam deposition and by plasma immersion implantation, respectively. In this work it is shown by experiments that this feature was due to the poor quality of backside ohmic contacts.
ISSN:0042-207X
1879-2715
DOI:10.1016/S0042-207X(98)00076-1