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Computerized optimization of multi-layered and/or multi-trace microstrip-lines for reduced cross-talk interference
In parallel microstrip-lines, the ratio of the thicknesses of two substrates is adjusted in the so-called compensated-substrate structures so that the propagation speeds of even and odd modes are made identical and cancel each other facilitating a reduced interline cross-talk interference. This pape...
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Published in: | Computers & electrical engineering 1997, Vol.23 (3), p.165-177 |
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Main Authors: | , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites |
Online Access: | Get full text |
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Summary: | In parallel microstrip-lines, the ratio of the thicknesses of two substrates is adjusted in the so-called compensated-substrate structures so that the propagation speeds of even and odd modes are made identical and cancel each other facilitating a reduced interline cross-talk interference. This paper presents an extension of the compensated-substrate approach to more complex microstrip structures such as four and eight parallel lines on a multi-layer board. Unlike the two parallel microstrip-lines, the perturbation of substrate thickness-ratio alone would not facilitate minimum cross-talk conditions in the multi-trace/multi-layer structures. Therefore, in such cases, say, for example, in four or eight microstrip lines laid on two-layer substrates, the cross-talk can be reduced by optimizing not only the ratio of compensating substrate thicknesses, but also the other dimensional parameters of the structure. Pertinent design warrants a multi-variable optimization computational procedure which is elaborated in the present study. Development of relevant optimization algorithms use the Spectral Domain Approach (SDA) in conjunction with the Fourier Transform (FT) method; and, the associated numerical method of solving for the design parameters are presented here. Further, typical test results are furnished which indicate the feasibility of achieving an interline cross-talk reduction of 76% at a given distance of 40 mm from the source-end excited with a 25 × 10
−12 s Gaussian pulse. |
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ISSN: | 0045-7906 1879-0755 |
DOI: | 10.1016/S0045-7906(97)00002-5 |