Suppression of non-radiative processes in semiconductor mid-infrared emitters and detectors

We review the methods that have been used for suppressing non-radiative processes in mid-infrared (MIR) semiconductor lasers and detectors. Specifically we discuss the results of techniques that have been used recently to minimise the deleterious effect of Auger recombination processes in interband...

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Bibliographic Details
Published in:Progress in quantum electronics 1997-01, Vol.21 (5), p.361-419
Main Authors: Pidgeon, C.R., Ciesla, C.M., Murdin, B.N.
Format: Article
Language:English
Subjects:
Bolometer
infrared, submillimeter wave, microwave and radiowave receivers and detectors
Bolometers
infrared, submillimeter wave, microwave, and radiowave receivers and detectors
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
Laser materials
Lasers
Optical materials
Optics
Physics
Semiconductor lasers
laser diodes
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Summary:We review the methods that have been used for suppressing non-radiative processes in mid-infrared (MIR) semiconductor lasers and detectors. Specifically we discuss the results of techniques that have been used recently to minimise the deleterious effect of Auger recombination processes in interband detectors and (bi-polar) lasers, and of phonon scattering in quantum well photodetectors (QWIPs) and quantum cascade (QC) lasers. After summarising the theory of the suppression of Auger and phonon processes in these devices, sections are devoted to specific III–V, II–VI and lead salt materials systems; further sections are devoted to subband detectors, subband cascade lasers, interband cascade lasers and to non-equilibrium devices from the InSb and HgCdTe systems.
ISSN:0079-6727
1873-1627
DOI:10.1016/S0079-6727(97)00012-8