Scanning tunneling microscopy of semiconductor surfaces

This review describes advances in understanding the structural, electronic, and chemical properties of clean low-index semiconductor surfaces during the first decade following the advent of the scanning tunneling microscope (STM). The principles of STM are discussed together with the instrumentation...

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Bibliographic Details
Published in:Surface science reports 1996-01, Vol.26 (3), p.61-204
Main Authors: Kubby, J.A., Boland, J.J.
Format: Article
Language:English
Subjects:
Gallium arsenide
Germanium
Scanning tunneling microscopy
Semiconductors
Silicon
Surface reconstructions
Tunneling spectroscopy
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Summary:This review describes advances in understanding the structural, electronic, and chemical properties of clean low-index semiconductor surfaces during the first decade following the advent of the scanning tunneling microscope (STM). The principles of STM are discussed together with the instrumentation required to perform STM measurements on semiconductor surfaces in ultrahigh vacuum. A comprehensive review of the structures of the clean, low-index surfaces of elemental and compound semiconductors is presented. These structures are discussed using the general physical principles that determine them.
ISSN:0167-5729
1879-274X
DOI:10.1016/S0167-5729(97)80001-5