A process for preparation of Q-CdSe thin films by liquid–liquid interface reaction technique

Q-CdSe thin films have been prepared by liquid–liquid interface reaction technique (LLIRT). The films were characterized by transmission electron microscopy, electron diffraction (ED), UV–visible spectroscopy and X-ray photoelectron spectroscopy (XPS). The optical property, namely, optical absorptio...

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Bibliographic Details
Published in:Materials letters 2000-11, Vol.46 (2), p.81-85
Main Authors: Patil, K.R, Paranjape, D.V, Sathaye, S.D, Mitra, A, Padalkar, S.R, Mandale, A.B
Format: Article
Language:English
Subjects:
Cadmium selenide
Chalcogenides
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Electron microscopy
Exact sciences and technology
Liquid phase epitaxy
deposition from liquid phases (melts, solutions, and surface layers on liquids)
Liquid–liquid interface reaction
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Nanoparticulates
Nanoscale materials and structures: fabrication and characterization
Nanostructures
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Physics
Semiconductors
Thin film
Visible and ultraviolet spectra
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Summary:Q-CdSe thin films have been prepared by liquid–liquid interface reaction technique (LLIRT). The films were characterized by transmission electron microscopy, electron diffraction (ED), UV–visible spectroscopy and X-ray photoelectron spectroscopy (XPS). The optical property, namely, optical absorption has been studied. The results show that CdSe is deposited as cubic-dominated polycrystalline phase with spherical nanometer sized small particles. The optical absorption shows blue shift, a characteristic of its Q nature.
ISSN:0167-577X
1873-4979
DOI:10.1016/S0167-577X(00)00146-4