Amorphous carbon and carbon nitride films prepared by filtered arc deposition and ion assisted arc deposition

In the present work, filtered arc deposition (FAD) and ion assisted arc adposition (IAAD) techniques have been used to deposit amorphous carbon (a-C) and carbon nitride (a-CN) films. Atomic and electronic structures of a-C films have been characterized by electron diffraction and electron energy los...

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Bibliographic Details
Published in:Materials letters 1997-11, Vol.33 (1), p.41-45
Main Authors: Zhao, J.P., Wang, X., Chen, Z.Y., Yang, S.Q., Shi, T.S., Liu, X.H.
Format: Article
Language:English
Subjects:
a-C
a-CN
Amorphous semiconductors, metallic glasses, glasses
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Electron states
Electronic structure of disordered solids
Exact sciences and technology
FAD
Field emission
IAAD
Ion and electron beam-assisted deposition
ion plating
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Optical properties
Physics
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Summary:In the present work, filtered arc deposition (FAD) and ion assisted arc adposition (IAAD) techniques have been used to deposit amorphous carbon (a-C) and carbon nitride (a-CN) films. Atomic and electronic structures of a-C films have been characterized by electron diffraction and electron energy loss spectra (EELS). In addition, the properties of a-C and a-CN films have been investigated with respect to field emission behavior and optical properties.
ISSN:0167-577X
1873-4979
DOI:10.1016/S0167-577X(97)00062-1