Competition between thermal donors and thermal acceptors in electron-irradiated silicon annealed at 400–700 °C

The formation of electrically active shallow centers in electron-irradiated silicon annealed in the range 400–700 °C was investigated. Radiation-enhanced formation of thermal donors (TDs) was observed at T∼400 °C. Non-uniform generation of TDs and thermal acceptors was found for an annealing tempera...

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Bibliographic Details
Published in:Microelectronic engineering 2003-04, Vol.66 (1), p.385-391
Main Authors: Antonova, I.V., Gulyev, M.B., Safronov, L.N., Smagulova, S.A.
Format: Article
Language:English
Subjects:
Electron irradiation
Inhomogeneity
Silicon
Thermal acceptors
Thermal donors
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Summary:The formation of electrically active shallow centers in electron-irradiated silicon annealed in the range 400–700 °C was investigated. Radiation-enhanced formation of thermal donors (TDs) was observed at T∼400 °C. Non-uniform generation of TDs and thermal acceptors was found for an annealing temperature of 450 °C. The formation of areas with p- and n-type conductivity correlates with the non-uniform distribution of oxygen in silicon. The temperature interval of thermal acceptor generation in electron-irradiated, Cz-grown silicon was found to be very narrow around 450 °C.
ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(02)00914-0