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Lateral SiGe heterojunction bipolar transistor by confined selective epitaxial growth: simulation and material growth

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Bibliographic Details
Published in:	Microelectronic engineering 2004-06, Vol.73-74, p.508-513
Main Authors:	PENGPAD, P, OSMAN, K, LLOYD, N. S, BONAR, J. M, ASHBURN, P, KEMHADJIAN, H. A, HAMEL, J. S, BAGNALL, D. M
Format:	Article
Language:	English
Subjects:	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
Citations:	Items that cite this one
Online Access:	Get full text
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