Selective metallization of silica surfaces by copper CVD using a chemical affinity pattern created by gas phase silylation and UV exposure

Selective metallization of surfaces was achieved using organo-metallic copper precursors in a completely dry two step process. Silica surfaces were derivatized with monofunctional silanes by gas phase silylation. Good coverage with covalently bound monolayers was obtained. UV-exposure of the halogen...

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Bibliographic Details
Published in:Microelectronic engineering 1997, Vol.33 (1), p.15-23
Main Authors: Doppelt, Pascal, Stelzle, Martin
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:Selective metallization of surfaces was achieved using organo-metallic copper precursors in a completely dry two step process. Silica surfaces were derivatized with monofunctional silanes by gas phase silylation. Good coverage with covalently bound monolayers was obtained. UV-exposure of the halogen or sulphur terminated molecules employing a mask resulted in a controlled pattern of the surface affinity towards the copper complex. The water and oxygen content of the ambient atmosphere exerts a pronounced influence on the result of the CVD process, which was particularly observed in case of a thiol terminated surface. The applicability of this method for both positive and negative lithography was demonstrated. The nature of the interaction between the chemically functionalized, patterned surface and the copper precursor is discussed.
ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(96)00026-3