Mechanical behaviour during thermal cycling of AlVPd line patterns

• Published in: Microelectronic engineering 1997, Vol.33 (1), p.129-135
• Main Authors: Lokker, J.P., Kalkman, A.J., Schellevis, H., Janssen, G.C.A.M., Radelaar, S.
• Format: Article
• Language: English
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Mechanical and acoustical properties; Physical properties of thin films, nonelectronic; Physics; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/S0167-9317(96)00038-X

The mechanical behaviour of AlV(0.1 at%)Pd(0.1 at%) films during thermal cycling is studied. Apart from films line patterns have also been studied. Passivated and unpassivated line patterns covering the whole wafer were produced. The curvature in line length and line width directions of the various wafers is determined in situ, during thermal cycling between 50°C and 400°C. For unpassivated AlVPd line structures the curvature in the line width direction is smaller than in the line length direction. Furthermore, a linear dependence between curvature and temperature has been obtained. For wafers with passivated AlVPd lines the curvature in the line length and line width directions are of the same order of magnitude. Again the curvatures depend linearly on the temperature in the whole temperature range between 50°C and 400°C.