Preparation of nanometer-scale windows in SiO 2 for selective epitaxial growth of Si based devices

Saved in:
Bibliographic Details
Published in:Microelectronic engineering 1997-02, Vol.35 (1-4), p.321-324
Main Authors: Maes, J.W.H., Lukey, P.W., Zijlstra, T., Visser, C., Caro, J., van der Drift, E.W.J.M., Tichelaar, F.D., Radelaar, S.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:
ISSN:0167-9317
DOI:10.1016/S0167-9317(96)00143-8