Stacking fault reduction in Silicon-on-Insulator (SOI) islands produced by Selective Epitaxial Growth (SEG) of Silicon using a thermally nitrided SiO2 field insulator

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Bibliographic Details
Published in:Microelectronic engineering 1997-06, Vol.36 (1-4), p.391-394
Main Authors: Neudeck, Gerold W., Merritt, Keith D., Denton, Jack P.
Format: Article
Language:English
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ISSN:0167-9317
DOI:10.1016/S0167-9317(97)00087-7