Metal etcher characterisation using flash memory cell as charging sensor

Fully processed Flash Memory cells have been used to characterise wafer charging damage in a Transformed Coupled Plasma production metal etcher. Wafers both bare and coated with photoresist were exposed to the plasma, and the actual process conditions were simulated by an Ar-reference discharge. Cha...

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Bibliographic Details
Published in:Microelectronic engineering 1997-11, Vol.37, p.403-410
Main Authors: Alba, S., Colognese, A., Ghio, E.
Format: Article
Language:English
Subjects:
Charging
Damage
Flash memory
Plasma
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Summary:Fully processed Flash Memory cells have been used to characterise wafer charging damage in a Transformed Coupled Plasma production metal etcher. Wafers both bare and coated with photoresist were exposed to the plasma, and the actual process conditions were simulated by an Ar-reference discharge. Charging effects due to process parameter changes were evaluated, revealing a strong dependence on RF source configurations. The new methodology was demonstrated to be suitable for process control and production monitoring.
ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(97)00139-1