Thermal characteristics of an X-ray mask during pattern transfer

Temperature gradients during mask fabrication can significantly affect the pattern fidelity of an X-ray mask. In order to minimize distortion effects, pattern transfer of the absorber must be done on a mask membrane. Temperature gradients also which occur during etch have an effect on both absorber...

Full description

Saved in:
Bibliographic Details
Published in:Microelectronic engineering 1998-03, Vol.41, p.287-290
Main Authors: Resnick, D.J., Pendharkar, S.V., Dauksher, W.J., Cummings, K.D., Laudon, M.F., Romanowicz, B., Renaud, P., Engelstad, R.L.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Temperature gradients during mask fabrication can significantly affect the pattern fidelity of an X-ray mask. In order to minimize distortion effects, pattern transfer of the absorber must be done on a mask membrane. Temperature gradients also which occur during etch have an effect on both absorber feature size and profile. In addition, these gradients can result in variations in etch rate, which negatively impacts pattern placement. The purpose of this paper is to describe the thermal characteristics of a DARPA-NIST X-ray mask substrate during pattern transfer. The means for minimizing the observed gradient is also described.
ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(98)00066-5