Dependence of developed negative resist profiles on exposure energy dose: experiment, modeling, and simulation

We consider the effect of exposure energy dose on the developed negative-resist profiles. We performed a series of experiments for 400 nm pitch periodic and isolated lines on Shipley SNR-248 negative resist coated Si wafers using a stepper and a Deep UV source at 248 nm. We obtained SEMs for exposur...

Full description

Saved in:
Bibliographic Details
Published in:Microelectronic engineering 1998-03, Vol.41, p.351-354
Main Authors: Hagouel, P.I., Karafyllidis, I., Neureuther, A.R.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We consider the effect of exposure energy dose on the developed negative-resist profiles. We performed a series of experiments for 400 nm pitch periodic and isolated lines on Shipley SNR-248 negative resist coated Si wafers using a stepper and a Deep UV source at 248 nm. We obtained SEMs for exposure doses of 11, 13, 17, and 23 mJ/cm 2. When the exposure energy dose increases the line width increases, the distance between lines decreases and profile slopes become more concave. We used Dill's ABC parameter model to model the exposure, cellular automata to model the resist cross-linking during post-exposure bake and the resist etching. Simulation using an algorithm based on this model validated the experimental results
ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(98)00081-1