Optical characterization of GaAs/AlAs short period superlattices

We present optical studies of a series of GaAs/AlAs short period superlattices grown by molecular beam epitaxy. The structural properties were examined by X-ray diffraction measurements. The quantum confinement of the electronic and the vibronic states were observed in the low temperature photolumin...

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Bibliographic Details
Published in:Microelectronic engineering 1998-08, Vol.43-44, p.265-270
Main Authors: Woo, D.H, Han, I.K, Choi, W.J, Lee, S, Kim, H.J, Lee, J.I, Kim, S.H, Kang, K.N, Choi, S.G, Kim, Y.D, Yoo, S.D, Aspnes, D.E, Rhee, S.J, Woo, J.C
Format: Article
Language:English
Subjects:
Applied sciences
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Design. Technologies. Operation analysis. Testing
Electrical properties of specific thin films
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronics
Exact sciences and technology
Iii-v semiconductors
Integrated circuits
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:We present optical studies of a series of GaAs/AlAs short period superlattices grown by molecular beam epitaxy. The structural properties were examined by X-ray diffraction measurements. The quantum confinement of the electronic and the vibronic states were observed in the low temperature photoluminescence and Raman scattering experiments, respectively. Spectroscopic ellipsometric (SE) measurements were also performed. We found a new structure at the lower E2 peak, which is the best resolution of the E2 structure in these SLs so far obtained by SE.
ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(98)00173-7