Conducting wires embedded in an i-GaAs matrix for electronic applications

A method of fabricating quasi-1D conducting wires of tin embedded in an i-GaAs matrix has been developed. The method involves forming a system of steps on vicinal surface of the GaAs(Cr) substrate misoriented 0.3° or 1° from the (001) plane forward to the (110) basal plane and decorating the ends of...

Full description

Saved in:
Bibliographic Details
Published in:Microelectronic engineering 1998-08, Vol.43-44, p.319-324
Main Authors: Kulbachinskii, V.A, Lunin, R.A, Kytin, V.G, Bugaev, A.S, Senichkin, A.P, Demin, A.V
Format: Article
Language:English
Subjects:
Quantum wires
Vicinal surface
Voltage–current characteristic
δ-doping
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A method of fabricating quasi-1D conducting wires of tin embedded in an i-GaAs matrix has been developed. The method involves forming a system of steps on vicinal surface of the GaAs(Cr) substrate misoriented 0.3° or 1° from the (001) plane forward to the (110) basal plane and decorating the ends of these steps with Sn through molecular-beam epitaxy. Transport properties of structures were measured in the temperature range 4.2–300 K at high electric fields up to E=104 V/cm using a pulse technique.
ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(98)00180-4