Photothermal wavelength modulated photocurrent phenomena in Si delta-doped GaAs

• Published in: Microelectronic engineering 1998-08, Vol.43-44, p.415-422
• Main Authors: Hajiev, F, Özkan, Y, Arikan, M.Ç
• Format: Article
• Language: English
• Subjects: Applied sciences; Blue shift; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Design. Technologies. Operation analysis. Testing; Electrical properties of specific thin films; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronics; Exact sciences and technology; Iii-v semiconductors; Integrated circuits; Photothermal; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Si δ-doped GaAs; Wavelength modulation
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/S0167-9317(98)00200-7

The first observation of photothermal wavelength modulated photocurrent (PWMPC) phenomena in a MBE grown p-GaAs sample in which a single Si-layer was embedded with a δ-type profile, is reported. Two spectral features were observed at 1.5137 eV and 1.5115 eV at 20 K. These peaks were attributed to the (D0, X) and (A0, X)-excitons bound to neutral donors and acceptors respectively. We studied the temperature dependence of these excitonic peak positions at temperatures between 20–90 K. Additionally, we demonstrate a blue shift of spectra under low level illumination intensity. PWMPC phenomena and the nature of the registered features were explored in detail. The dependence of the excitonic peaks on the chopping frequency and the intensity is discussed.