Ultrathin GaAs layers embedded in AlAs: a perspective for intense short wavelength emission

Type-II GaAs/AlAs quantum-well samples grown by low-pressure metal-organic vapour-phase epitaxy consisting of 50 periods of either 2 monolayers (ML), 4 ML, 5 ML, 6 ML, or 7 ML GaAs embedded in 28 ML AlAs were under investigation. Even at room temperature dominant type-I luminescence has been observe...

Full description

Saved in:
Bibliographic Details
Published in:Microelectronic engineering 1998-08, Vol.43-44, p.561-565
Main Authors: Pietag, F, Schwabe, R, Gottschalch, V, Di Ventra, M, Bitz, A, Staehli, J.L
Format: Article
Language:English
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Type-II GaAs/AlAs quantum-well samples grown by low-pressure metal-organic vapour-phase epitaxy consisting of 50 periods of either 2 monolayers (ML), 4 ML, 5 ML, 6 ML, or 7 ML GaAs embedded in 28 ML AlAs were under investigation. Even at room temperature dominant type-I luminescence has been observed. The peak wavelength of this emission ranges from 620 to 440 nm and is determined by the GaAs layer thickness. A comparison of the measured transition energies with model calculations applying an effective mass approach and an empirical tight-binding Green's function scheme confirmed this strong dependence. To our knowledge this is the first report on intense yellow, green, and blue luminescence from GaAs.
ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(98)00219-6