Ion beam analysis of aluminium ion implanted titanium diboride thin films

Titanium diboride is often selected for protective coatings due to its high hardness and wear resistance. However, its possible high temperature applications are limited because it exhibits poor oxidation resistance at elevated temperatures. Through ion beam modification, it was anticipated that a s...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2002-05, Vol.190 (1), p.736-741
Main Authors: Mollica, S., Sood, D.K., Evans, P.J., Dytlewski, N., Short, K.T.
Format: Article
Language:English
Subjects:
High temperature oxidation
Ion implantation
Thin films
Titanium diboride
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Summary:Titanium diboride is often selected for protective coatings due to its high hardness and wear resistance. However, its possible high temperature applications are limited because it exhibits poor oxidation resistance at elevated temperatures. Through ion beam modification, it was anticipated that a stable oxidation barrier could form via the formation of “metastable phases” not otherwise observed in stoichiometric TiB 2. Titanium diboride films were deposited onto single-crystal Si(1 0 0) substrates using DC magnetron sputtering. MEVVA ion implantation was then performed using an extraction voltage of 40 kV. Selected samples were subjected to post-implantation vacuum annealing prior to oxidation, thus comparing the behaviour of crystalline and amorphous films. Results show that aluminium ion implantation reduces the oxidation rate of DC magnetron sputtered titanium diboride thin films within the experimental temperature range.
ISSN:0168-583X
1872-9584
DOI:10.1016/S0168-583X(02)00465-2